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Explore 176 Layers of Innovation. Micron makes a quantum leap, delivering the world's most technologically advanced NAND with industry-first, 176-layer flash memory. Architected to accelerate, Micron's unique replacement-gate design combines charge trap with CMOS-under-array to deliver the industry's leading data transfer rate.

 · The NAND Flash device discussed in this technical note is based on a 2Gb asynchronous SLC device and its parameters (unless otherwise noted). Higher density devices and other more advanced NAND devices may have additional features and different parame-ters. The NAND Flash array is grouped into a series of blocks, which are the smallest erasable

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 · Chris Mellor. -. May 13, 2022. Micron has 232-layer 3D NAND in development and a roadmap out to 500-plus layers. 3D NAND is manufactured by layering groups of cells atop each other in a vertical stack. The more layers there are in a flash die, the higher the capacity. All the manufacturers are currently building 100-plus layer chips with higher ...

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